Design of low inductance switching power cell for GaN HEMT based inverter
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented...
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IEEE
2017
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| Online Access: | https://eprints.nottingham.ac.uk/49652/ |
| _version_ | 1848798047501287424 |
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| author | Gurpinar, Emre Iannuzzo, Francesco Yang, Yongheng Castellazzi, Alberto Blaabjerg, Frede |
| author_facet | Gurpinar, Emre Iannuzzo, Francesco Yang, Yongheng Castellazzi, Alberto Blaabjerg, Frede |
| author_sort | Gurpinar, Emre |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Commonmode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance. |
| first_indexed | 2025-11-14T20:13:34Z |
| format | Article |
| id | nottingham-49652 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:13:34Z |
| publishDate | 2017 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-496522020-05-04T19:13:30Z https://eprints.nottingham.ac.uk/49652/ Design of low inductance switching power cell for GaN HEMT based inverter Gurpinar, Emre Iannuzzo, Francesco Yang, Yongheng Castellazzi, Alberto Blaabjerg, Frede In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Commonmode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance. IEEE 2017-10-23 Article PeerReviewed Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto and Blaabjerg, Frede (2017) Design of low inductance switching power cell for GaN HEMT based inverter. IEEE Transactions on Industry Applications . ISSN 1939-9367 Wide bandgap (WBG) power devices galliumnitride (GaN) HEMT three-level active neutral point clamped (3L-ANPC) converter photovoltaic (PV) systems stray inductance. http://ieeexplore.ieee.org/document/8119516/ doi:10.1109/TIA.2017.2777417 doi:10.1109/TIA.2017.2777417 |
| spellingShingle | Wide bandgap (WBG) power devices galliumnitride (GaN) HEMT three-level active neutral point clamped (3L-ANPC) converter photovoltaic (PV) systems stray inductance. Gurpinar, Emre Iannuzzo, Francesco Yang, Yongheng Castellazzi, Alberto Blaabjerg, Frede Design of low inductance switching power cell for GaN HEMT based inverter |
| title | Design of low inductance switching power cell for GaN HEMT based inverter |
| title_full | Design of low inductance switching power cell for GaN HEMT based inverter |
| title_fullStr | Design of low inductance switching power cell for GaN HEMT based inverter |
| title_full_unstemmed | Design of low inductance switching power cell for GaN HEMT based inverter |
| title_short | Design of low inductance switching power cell for GaN HEMT based inverter |
| title_sort | design of low inductance switching power cell for gan hemt based inverter |
| topic | Wide bandgap (WBG) power devices galliumnitride (GaN) HEMT three-level active neutral point clamped (3L-ANPC) converter photovoltaic (PV) systems stray inductance. |
| url | https://eprints.nottingham.ac.uk/49652/ https://eprints.nottingham.ac.uk/49652/ https://eprints.nottingham.ac.uk/49652/ |