γ-rays irradiation eﬀects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

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γ-rays irradiation eﬀects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric...

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Bibliographic Details
Main Author:	Henini, M.
Format:	Article
Published:	Elsevier 2018
Subjects:	γ-Rays irradiation Dielectric relaxation Dielectric constant Dielectric loss AC conductivity
Online Access:	https://eprints.nottingham.ac.uk/49647/

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