γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric...

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Bibliographic Details
Main Author: Henini, M.
Format: Article
Published: Elsevier 2018
Subjects:
γ-Rays irradiation
Dielectric relaxation
Dielectric constant
Dielectric loss
AC conductivity
Online Access:https://eprints.nottingham.ac.uk/49647/

Internet

https://eprints.nottingham.ac.uk/49647/

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