High-temperature molecular beam epitaxy of hexagonal boron nitride layers

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High-temperature molecular beam epitaxy of hexagonal boron nitride layers

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) applications. We present our results on the high-te...

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Bibliographic Details
Main Authors:	Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Davies, Andrew, Khlobystov, Andrei N., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V.
Format:	Article
Language:	English
Published:	AIP Publishing 2018
Online Access:	https://eprints.nottingham.ac.uk/49392/

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