High-temperature molecular beam epitaxy of hexagonal boron nitride layers

High-temperature molecular beam epitaxy of hexagonal boron nitride layers

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) applications. We present our results on the high-te...

Full description

Bibliographic Details
Main Authors: Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Davies, Andrew, Khlobystov, Andrei N., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V.
Format: Article
Language:English
Published: AIP Publishing 2018
Online Access:https://eprints.nottingham.ac.uk/49392/

Internet

https://eprints.nottingham.ac.uk/49392/

Similar Items