Highly-integrated power cell for high-power wide band-gap power converters

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Highly-integrated power cell for high-power wide band-gap power converters

The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be pa...

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Bibliographic Details
Main Authors:	Espina, Jordi, Ahmadi, Behzad, Empringham, Lee, De Lillo, Liliana, Johnson, Christopher Mark
Format:	Conference or Workshop Item
Published:	2017
Subjects:	Power electronics integration; wide bandgap semiconductors; power-density
Online Access:	https://eprints.nottingham.ac.uk/49289/

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