Highly-integrated power cell for high-power wide band-gap power converters
The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be pa...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/49289/ |