Highly-integrated power cell for high-power wide band-gap power converters
The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be pa...
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| Format: | Conference or Workshop Item |
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2017
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| Online Access: | https://eprints.nottingham.ac.uk/49289/ |
| _version_ | 1848797965623230464 |
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| author | Espina, Jordi Ahmadi, Behzad Empringham, Lee De Lillo, Liliana Johnson, Christopher Mark |
| author_facet | Espina, Jordi Ahmadi, Behzad Empringham, Lee De Lillo, Liliana Johnson, Christopher Mark |
| author_sort | Espina, Jordi |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be paid to switching cell design to mitigate the effects of circuit parasitics and fast voltage transitions which would otherwise limit the attainable switching speed and lead to increased levels of EMI. This paper presents a modular, power-cell solution which allows the creation of any two-level topology converter. The cell structure enables fast switching of wide bandgap semiconductor devices while allowing high power converters to be fabricated using multiple, smaller commutation cells. Close integration of semiconductor dies, decoupling capacitors, gate drives and an output filter with a single ceramic substrate to act as the thermal path allows dramatic increases in power density without compromising converter performance |
| first_indexed | 2025-11-14T20:12:15Z |
| format | Conference or Workshop Item |
| id | nottingham-49289 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:12:15Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-492892020-05-04T18:48:41Z https://eprints.nottingham.ac.uk/49289/ Highly-integrated power cell for high-power wide band-gap power converters Espina, Jordi Ahmadi, Behzad Empringham, Lee De Lillo, Liliana Johnson, Christopher Mark The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be paid to switching cell design to mitigate the effects of circuit parasitics and fast voltage transitions which would otherwise limit the attainable switching speed and lead to increased levels of EMI. This paper presents a modular, power-cell solution which allows the creation of any two-level topology converter. The cell structure enables fast switching of wide bandgap semiconductor devices while allowing high power converters to be fabricated using multiple, smaller commutation cells. Close integration of semiconductor dies, decoupling capacitors, gate drives and an output filter with a single ceramic substrate to act as the thermal path allows dramatic increases in power density without compromising converter performance 2017-06-03 Conference or Workshop Item PeerReviewed Espina, Jordi, Ahmadi, Behzad, Empringham, Lee, De Lillo, Liliana and Johnson, Christopher Mark (2017) Highly-integrated power cell for high-power wide band-gap power converters. In: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 3-7 June 2017, Kaohsiung, Taiwan. Power electronics integration; wide bandgap semiconductors; power-density http://ieeexplore.ieee.org/document/7992433/ |
| spellingShingle | Power electronics integration; wide bandgap semiconductors; power-density Espina, Jordi Ahmadi, Behzad Empringham, Lee De Lillo, Liliana Johnson, Christopher Mark Highly-integrated power cell for high-power wide band-gap power converters |
| title | Highly-integrated power cell for high-power wide band-gap power converters |
| title_full | Highly-integrated power cell for high-power wide band-gap power converters |
| title_fullStr | Highly-integrated power cell for high-power wide band-gap power converters |
| title_full_unstemmed | Highly-integrated power cell for high-power wide band-gap power converters |
| title_short | Highly-integrated power cell for high-power wide band-gap power converters |
| title_sort | highly-integrated power cell for high-power wide band-gap power converters |
| topic | Power electronics integration; wide bandgap semiconductors; power-density |
| url | https://eprints.nottingham.ac.uk/49289/ https://eprints.nottingham.ac.uk/49289/ |