Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes

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Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic fi...

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Bibliographic Details
Main Authors:	Galeti, H.V.A., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D., Henini, M.
Format:	Article
Published:	Springer 2018
Subjects:	Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence
Online Access:	https://eprints.nottingham.ac.uk/49213/

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