Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes
We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic fi...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
Springer
2018
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/49213/ |