Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes
We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic fi...
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| Format: | Article |
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Springer
2018
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| Online Access: | https://eprints.nottingham.ac.uk/49213/ |
| _version_ | 1848797946827505664 |
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| author | Galeti, H.V.A. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. |
| author_facet | Galeti, H.V.A. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. |
| author_sort | Galeti, H.V.A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect. |
| first_indexed | 2025-11-14T20:11:58Z |
| format | Article |
| id | nottingham-49213 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:11:58Z |
| publishDate | 2018 |
| publisher | Springer |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-492132020-05-04T19:27:16Z https://eprints.nottingham.ac.uk/49213/ Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes Galeti, H.V.A. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect. Springer 2018-01-16 Article PeerReviewed Galeti, H.V.A., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2018) Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47 (3). pp. 1780-1785. ISSN 1543-186X Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence https://link.springer.com/article/10.1007%2Fs11664-018-6065-4 doi:10.1007/s11664-018-6065-4 doi:10.1007/s11664-018-6065-4 |
| spellingShingle | Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence Galeti, H.V.A. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title | Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title_full | Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title_fullStr | Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title_full_unstemmed | Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title_short | Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes |
| title_sort | voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type gaas/alas resonant tunneling diodes |
| topic | Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence |
| url | https://eprints.nottingham.ac.uk/49213/ https://eprints.nottingham.ac.uk/49213/ https://eprints.nottingham.ac.uk/49213/ |