Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes

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Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes

The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n...

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Bibliographic Details
Main Author:	Henini, M.
Format:	Article
Published:	Elsevier 2017
Subjects:	Schottky barrier height; Doping concentration effect; Current–voltage characteristics; Cheung's equation; Gaussian distribution of barrier heights
Online Access:	https://eprints.nottingham.ac.uk/48225/

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