Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes
The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n...
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| Format: | Article |
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Elsevier
2017
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| Online Access: | https://eprints.nottingham.ac.uk/48225/ |