Detailed investigation of defect states in Erbium doped In2O3 thin films

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Detailed investigation of defect states in Erbium doped In2O3 thin films

Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:...

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Bibliographic Details
Main Author:	Henini, M.
Format:	Article
Published:	Elsevier 2018
Subjects:	A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties
Online Access:	https://eprints.nottingham.ac.uk/48224/

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