Detailed investigation of defect states in Erbium doped In2O3 thin films
Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:...
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| Format: | Article |
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Elsevier
2018
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| Online Access: | https://eprints.nottingham.ac.uk/48224/ |