Detailed investigation of defect states in Erbium doped In2O3 thin films
Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:...
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| Format: | Article |
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Elsevier
2018
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| Online Access: | https://eprints.nottingham.ac.uk/48224/ |
| _version_ | 1848797718118400000 |
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| author | Henini, M. |
| author_facet | Henini, M. |
| author_sort | Henini, M. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si. |
| first_indexed | 2025-11-14T20:08:19Z |
| format | Article |
| id | nottingham-48224 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:08:19Z |
| publishDate | 2018 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-482242020-05-04T19:52:10Z https://eprints.nottingham.ac.uk/48224/ Detailed investigation of defect states in Erbium doped In2O3 thin films Henini, M. Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si. Elsevier 2018-03 Article PeerReviewed Henini, M. (2018) Detailed investigation of defect states in Erbium doped In2O3 thin films. Materials Research Bulletin, 99 . pp. 211-218. ISSN 0025-5408 A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties http://www.sciencedirect.com/science/article/pii/S0025540817320561 doi:10.1016/j.materresbull.2017.11.020 doi:10.1016/j.materresbull.2017.11.020 |
| spellingShingle | A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties Henini, M. Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title | Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title_full | Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title_fullStr | Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title_full_unstemmed | Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title_short | Detailed investigation of defect states in Erbium doped In2O3 thin films |
| title_sort | detailed investigation of defect states in erbium doped in2o3 thin films |
| topic | A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties |
| url | https://eprints.nottingham.ac.uk/48224/ https://eprints.nottingham.ac.uk/48224/ https://eprints.nottingham.ac.uk/48224/ |