Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers
This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated-gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-10X), significantly lower leakage currents, and lower para...
| Main Authors: | , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/47232/ |