Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers

This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated-gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-10X), significantly lower leakage currents, and lower para...

Full description

Bibliographic Details
Main Authors: Aliyu, Attahir Murtala, Mouawad, Bassem, Castellazzi, Alberto, Rajaguru, P., Bailey, C., Pathirana, V., Udugampola, N., Trajkovic, T., Udrea, F.
Format: Conference or Workshop Item
Published: 2017
Subjects:
Online Access:https://eprints.nottingham.ac.uk/47232/