Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung...

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Bibliographic Details
Main Authors: Filali, Walid, Sengouga, Nouredine, Oussalah, Slimane, Mari, Riaz H., Jameel, Dler Adil, Al Saqri, Noor alhuda, Aziz, Mohsin, Taylor, David, Henini, M.
Format: Article
Published: Elsevier 2017
Subjects:
MQW; GaAs/AlGaAs Schottky diodes; Inhomogeneous barrier height; Defects; Tunnelling
Online Access:https://eprints.nottingham.ac.uk/46460/

Internet

https://eprints.nottingham.ac.uk/46460/

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