An atomic carbon source for high temperature molecular beam epitaxy of graphene

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An atomic carbon source for high temperature molecular beam epitaxy of graphene

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated t...

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Bibliographic Details
Main Authors:	Albar, J.D., Summerfield, Alex, Cheng, Tin S., Davies, Andrew, Smith, E.F., Khlobystov, Andrei N., Mellor, C.J., Taniguchi, Takashi, Watanabe, Kenji, Foxon, C.T., Eaves, Laurence, Beton, Peter H., Novikov, Sergei V.
Format:	Article
Published:	Nature Publishing Group 2017
Online Access:	https://eprints.nottingham.ac.uk/44844/

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