An atomic carbon source for high temperature molecular beam epitaxy of graphene
We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated t...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Published: |
Nature Publishing Group
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44844/ |