An atomic carbon source for high temperature molecular beam epitaxy of graphene
We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated t...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
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Nature Publishing Group
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44844/ |
| _version_ | 1848797011226132480 |
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| author | Albar, J.D. Summerfield, Alex Cheng, Tin S. Davies, Andrew Smith, E.F. Khlobystov, Andrei N. Mellor, C.J. Taniguchi, Takashi Watanabe, Kenji Foxon, C.T. Eaves, Laurence Beton, Peter H. Novikov, Sergei V. |
| author_facet | Albar, J.D. Summerfield, Alex Cheng, Tin S. Davies, Andrew Smith, E.F. Khlobystov, Andrei N. Mellor, C.J. Taniguchi, Takashi Watanabe, Kenji Foxon, C.T. Eaves, Laurence Beton, Peter H. Novikov, Sergei V. |
| author_sort | Albar, J.D. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source. |
| first_indexed | 2025-11-14T19:57:05Z |
| format | Article |
| id | nottingham-44844 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:57:05Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-448442020-05-04T18:57:09Z https://eprints.nottingham.ac.uk/44844/ An atomic carbon source for high temperature molecular beam epitaxy of graphene Albar, J.D. Summerfield, Alex Cheng, Tin S. Davies, Andrew Smith, E.F. Khlobystov, Andrei N. Mellor, C.J. Taniguchi, Takashi Watanabe, Kenji Foxon, C.T. Eaves, Laurence Beton, Peter H. Novikov, Sergei V. We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source. Nature Publishing Group 2017-07-26 Article PeerReviewed Albar, J.D., Summerfield, Alex, Cheng, Tin S., Davies, Andrew, Smith, E.F., Khlobystov, Andrei N., Mellor, C.J., Taniguchi, Takashi, Watanabe, Kenji, Foxon, C.T., Eaves, Laurence, Beton, Peter H. and Novikov, Sergei V. (2017) An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7 (1). 6598/1-6598/8. ISSN 2045-2322 https://www.nature.com/articles/s41598-017-07021-1 doi:10.1038/s41598-017-07021-1 doi:10.1038/s41598-017-07021-1 |
| spellingShingle | Albar, J.D. Summerfield, Alex Cheng, Tin S. Davies, Andrew Smith, E.F. Khlobystov, Andrei N. Mellor, C.J. Taniguchi, Takashi Watanabe, Kenji Foxon, C.T. Eaves, Laurence Beton, Peter H. Novikov, Sergei V. An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title | An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title_full | An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title_fullStr | An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title_full_unstemmed | An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title_short | An atomic carbon source for high temperature molecular beam epitaxy of graphene |
| title_sort | atomic carbon source for high temperature molecular beam epitaxy of graphene |
| url | https://eprints.nottingham.ac.uk/44844/ https://eprints.nottingham.ac.uk/44844/ https://eprints.nottingham.ac.uk/44844/ |