SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

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SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theoretical analysis that examines how the characteris...

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Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Mark
Format:	Article
Published:	Institution of Engineering and Technology 2017
Online Access:	https://eprints.nottingham.ac.uk/44689/

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