SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theoretical analysis that examines how the characteris...
| Main Authors: | , , |
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| Format: | Article |
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Institution of Engineering and Technology
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44689/ |