Li, K., Evans, P., & Johnson, M. (2017). SiC/GaN power semiconductor devices: A theoretical comparison and experimental evaluation under different switching conditions. Institution of Engineering and Technology.
Chicago Style (17th ed.) CitationLi, Ke, Paul Evans, and Mark Johnson. SiC/GaN Power Semiconductor Devices: A Theoretical Comparison and Experimental Evaluation Under Different Switching Conditions. Institution of Engineering and Technology, 2017.
MLA (9th ed.) CitationLi, Ke, et al. SiC/GaN Power Semiconductor Devices: A Theoretical Comparison and Experimental Evaluation Under Different Switching Conditions. Institution of Engineering and Technology, 2017.
Warning: These citations may not always be 100% accurate.