Evaluation of SiC Schottky diodes using pressure contacts
The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high pow...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44371/ |
| _version_ | 1848796902067273728 |
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| author | Ortiz Gonzalez, J. Alatise, O. Aliyu, Attahir Murtala Rajaguru, Pushparajah Castellazzi, Alberto Ran, L. Mawby, P. Bailey, Christopher |
| author_facet | Ortiz Gonzalez, J. Alatise, O. Aliyu, Attahir Murtala Rajaguru, Pushparajah Castellazzi, Alberto Ran, L. Mawby, P. Bailey, Christopher |
| author_sort | Ortiz Gonzalez, J. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated. |
| first_indexed | 2025-11-14T19:55:21Z |
| format | Article |
| id | nottingham-44371 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:55:21Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-443712020-05-04T19:55:15Z https://eprints.nottingham.ac.uk/44371/ Evaluation of SiC Schottky diodes using pressure contacts Ortiz Gonzalez, J. Alatise, O. Aliyu, Attahir Murtala Rajaguru, Pushparajah Castellazzi, Alberto Ran, L. Mawby, P. Bailey, Christopher The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated. Institute of Electrical and Electronics Engineers 2017-10 Article PeerReviewed Ortiz Gonzalez, J., Alatise, O., Aliyu, Attahir Murtala, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, L., Mawby, P. and Bailey, Christopher (2017) Evaluation of SiC Schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10). pp. 8213-8223. ISSN 1557-9948 semiconductor device packaging Schottky diodes Silicon carbide pressure packaging http://ieeexplore.ieee.org/document/7869354/ doi:10.1109/TIE.2017.2677348 doi:10.1109/TIE.2017.2677348 |
| spellingShingle | semiconductor device packaging Schottky diodes Silicon carbide pressure packaging Ortiz Gonzalez, J. Alatise, O. Aliyu, Attahir Murtala Rajaguru, Pushparajah Castellazzi, Alberto Ran, L. Mawby, P. Bailey, Christopher Evaluation of SiC Schottky diodes using pressure contacts |
| title | Evaluation of SiC Schottky diodes using pressure contacts |
| title_full | Evaluation of SiC Schottky diodes using pressure contacts |
| title_fullStr | Evaluation of SiC Schottky diodes using pressure contacts |
| title_full_unstemmed | Evaluation of SiC Schottky diodes using pressure contacts |
| title_short | Evaluation of SiC Schottky diodes using pressure contacts |
| title_sort | evaluation of sic schottky diodes using pressure contacts |
| topic | semiconductor device packaging Schottky diodes Silicon carbide pressure packaging |
| url | https://eprints.nottingham.ac.uk/44371/ https://eprints.nottingham.ac.uk/44371/ https://eprints.nottingham.ac.uk/44371/ |