Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance

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Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased for. Thus, dynamic RDS(on) of different commercial...

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Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Mark
Format:	Article
Published:	IEEE 2017
Subjects:	GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Equivalent circuit
Online Access:	https://eprints.nottingham.ac.uk/44351/

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