Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased for. Thus, dynamic RDS(on) of different commercial...
| Main Authors: | , , |
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| Format: | Article |
| Published: |
IEEE
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/44351/ |