Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased for. Thus, dynamic RDS(on) of different commercial...
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| Format: | Article |
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IEEE
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44351/ |
| _version_ | 1848796897287864320 |
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| author | Li, Ke Evans, Paul Johnson, Mark |
| author_facet | Li, Ke Evans, Paul Johnson, Mark |
| author_sort | Li, Ke |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased for. Thus, dynamic RDS(on) of different commercial GaN-HEMTs are characterised at different bias voltages in the paper by a proposed new measurement circuit. The time-constants associated with trapping and detrapping effects in the device are extracted using the proposed circuit and it is shown that variations in RDS(on) can be predicted using a series of RC circuit networks. A new methodology for integrating these RDS(on) predictions into existing GaN-HEMT models in standard SPICE simulators to improve model accuracy is then presented. Finally, device dynamic RDS(on) values of the model is compared and validated with the measurement when it switches in a power converter with different duty cycles and switching voltages. |
| first_indexed | 2025-11-14T19:55:17Z |
| format | Article |
| id | nottingham-44351 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:55:17Z |
| publishDate | 2017 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-443512020-05-04T18:55:49Z https://eprints.nottingham.ac.uk/44351/ Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance Li, Ke Evans, Paul Johnson, Mark GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased for. Thus, dynamic RDS(on) of different commercial GaN-HEMTs are characterised at different bias voltages in the paper by a proposed new measurement circuit. The time-constants associated with trapping and detrapping effects in the device are extracted using the proposed circuit and it is shown that variations in RDS(on) can be predicted using a series of RC circuit networks. A new methodology for integrating these RDS(on) predictions into existing GaN-HEMT models in standard SPICE simulators to improve model accuracy is then presented. Finally, device dynamic RDS(on) values of the model is compared and validated with the measurement when it switches in a power converter with different duty cycles and switching voltages. IEEE 2017-07-16 Article PeerReviewed Li, Ke, Evans, Paul and Johnson, Mark (2017) Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics . ISSN 0885-8993 (In Press) GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Equivalent circuit |
| spellingShingle | GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Equivalent circuit Li, Ke Evans, Paul Johnson, Mark Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance |
| title | Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| title_full | Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| title_fullStr | Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| title_full_unstemmed | Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| title_short | Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| title_sort | characterisation and modelling of gallium nitride
power semiconductor devices dynamic on-state
resistance |
| topic | GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Equivalent circuit |
| url | https://eprints.nottingham.ac.uk/44351/ |