Built-in reliability design of a high-frequency SiC MOSFET power module
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the s...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/44169/ |