Packaging/assembling technologies for a high performance SiC-based planar power module

QR Code

Packaging/assembling technologies for a high performance SiC-based planar power module

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC bus and non-hermetic module. The results reported i...

Full description

Bibliographic Details
Main Authors:	Li, Jianfeng, Agyakwa, Pearl, Evans, Paul, Johnson, Christopher Mark, Zhao, Yimin, Wu, Yibo, Evans, Kim
Format:	Conference or Workshop Item
Published:	2014
Online Access:	https://eprints.nottingham.ac.uk/44168/

Similar Items

Low parasitic inductance multi-chip SiC devices packaging technology
by: Li, Jianfeng, et al.
Published: (2016)

Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules
by: Yang, Li, et al.
Published: (2018)

Low inductance 2.5kV packaging technology for SiC switches
by: Mouawad, Bassem, et al.
Published: (2016)

Reliable integration of a high performance multi-chip half-bridge SiC power module
by: Mouawad, Bassem, et al.
Published: (2016)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

A physical RC network model for electro-thermal analysis of a multichip SiC power module
by: Li, Jianfeng, et al.
Published: (2017)

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool
by: Li, Ke, et al.
Published: (2017)

Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment
by: Li, Jianfeng, et al.
Published: (2014)

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions
by: Li, Ke, et al.
Published: (2017)

Testing of a lightweight SiC power module for avionic applications
by: Gurpinar, Emre, et al.
Published: (2014)

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles
by: Li, Jianfeng, et al.
Published: (2015)

Built-in reliability design of a high-frequency SiC MOSFET power module
by: Li, Jianfeng, et al.
Published: (2014)

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules
by: Ortiz Gonzalez, J., et al.
Published: (2016)

Time-efficient sintering processes to attach power devices using nanosilver dry film
by: Dai, Jingru, et al.
Published: (2017)

Multidomain modelling of multichip SiC power modules
by: Olanrewaju, Olufisayo Abimbola
Published: (2020)

Pressure contact multi-chip packaging of SiC Schottky diodes
by: Gonzalez, Jose Ortiz, et al.
Published: (2017)

Design and development of a high-density, high-speed 10 kV SiC MOSFET module
by: Di Marino, Christina, et al.
Published: (2017)

Response to comments on “A numerical method to determine interdiffusion coefficients of Cu6Sn5 and Cu3Sn intermetallic compounds”
by: Li, Jianfeng, et al.
Published: (2016)

Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules
by: Yang, Li, et al.
Published: (2013)

Predicting lifetime of thick Al wire bonds using signals obtained from ultrasonic generator
by: Arjmand, Elahjeh, et al.
Published: (2016)

Quantitative microstructure characterization of Ag nanoparticle sintered joints for power die attachment
by: Wang, Yun, et al.
Published: (2014)

Comparative thermal and structural characterization of sintered nano-silver and high-lead solder die attachments during power cycling
by: Dai, Jingru, et al.
Published: (2018)

Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors
by: Yang, Li, et al.
Published: (2018)

Damage evolution in Al wire bonds subjected to a junction temperature fluctuation of 30 K
by: Agyakwa, Pearl, et al.
Published: (2016)

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field
by: DiMarino, C., et al.
Published: (2018)

Design and construction of a co-planar power bus interconnect for low inductance switching
by: Lin, Xi, et al.
Published: (2017)

3.3 kV SiC JBS diode configurable rectifier module
by: Mouawad, Bassem, et al.
Published: (2017)

Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
by: Eleffendi, Mohd. Amir, et al.
Published: (2016)

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
by: Rebaoui, Z., et al.
Published: (2017)

Hybrid half-bridge package for high voltage application
by: Mouawad, Bassem, et al.
Published: (2015)

Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes
by: Li, J.F., et al.
Published: (2014)

Structured ZSM-5/SiC foam catalysts for bio-oils upgrading
by: Ou, Xiaoxia, et al.
Published: (2020)

Improved reliability of planar power interconnect with ceramic-based structure
by: Zhang, Hui, et al.
Published: (2018)

Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly
by: Lasserre, Philippe, et al.
Published: (2016)

Phase and thermal stability in Ti3SiC2 and Ti3SiC2/TiC/TiSi2 systems
by: Pang, Wei Kong, et al.
Published: (2012)

Evaluation of SiC Schottky diodes using pressure contacts
by: Ortiz Gonzalez, J., et al.
Published: (2017)

Creep and microstructural development in P91 weldments at elevated temperature
by: Agyakwa, Pearl
Published: (2004)

A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography
by: Agyakwa, Pearl, et al.
Published: (2014)

Dependence of overcurrent failure modes of IGBT modules on interconnect technologies
by: Yaqub, Imran, et al.
Published: (2015)