A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

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A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure...

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Bibliographic Details
Main Authors:	Fayyaz, Asad, Romano, Gianpaolo, Urresti, Jesus, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea, Wright, Nick
Format:	Article
Published:	MDPI 2017
Subjects:	avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current
Online Access:	https://eprints.nottingham.ac.uk/44109/

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