A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure...

Full description

Bibliographic Details
Main Authors: Fayyaz, Asad, Romano, Gianpaolo, Urresti, Jesus, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea, Wright, Nick
Format: Article
Published: MDPI 2017
Subjects:
avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current
Online Access:https://eprints.nottingham.ac.uk/44109/

Internet

https://eprints.nottingham.ac.uk/44109/

Similar Items