A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure...
| Main Authors: | , , , , , , |
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| Format: | Article |
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MDPI
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44109/ |
| _version_ | 1848796840270495744 |
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| author | Fayyaz, Asad Romano, Gianpaolo Urresti, Jesus Riccio, Michele Castellazzi, Alberto Irace, Andrea Wright, Nick |
| author_facet | Fayyaz, Asad Romano, Gianpaolo Urresti, Jesus Riccio, Michele Castellazzi, Alberto Irace, Andrea Wright, Nick |
| author_sort | Fayyaz, Asad |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown |
| first_indexed | 2025-11-14T19:54:22Z |
| format | Article |
| id | nottingham-44109 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:54:22Z |
| publishDate | 2017 |
| publisher | MDPI |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-441092020-05-04T18:40:12Z https://eprints.nottingham.ac.uk/44109/ A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs Fayyaz, Asad Romano, Gianpaolo Urresti, Jesus Riccio, Michele Castellazzi, Alberto Irace, Andrea Wright, Nick This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown MDPI 2017-04-01 Article PeerReviewed Fayyaz, Asad, Romano, Gianpaolo, Urresti, Jesus, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073 avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current http://www.mdpi.com/1996-1073/10/4/452 doi:10.3390/en10040452 doi:10.3390/en10040452 |
| spellingShingle | avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current Fayyaz, Asad Romano, Gianpaolo Urresti, Jesus Riccio, Michele Castellazzi, Alberto Irace, Andrea Wright, Nick A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title | A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title_full | A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title_fullStr | A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title_full_unstemmed | A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title_short | A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs |
| title_sort | comprehensive study on the avalanche breakdown robustness of silicon carbide power mosfets |
| topic | avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current |
| url | https://eprints.nottingham.ac.uk/44109/ https://eprints.nottingham.ac.uk/44109/ https://eprints.nottingham.ac.uk/44109/ |