3.3 kV SiC JBS diode configurable rectifier module

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3.3 kV SiC JBS diode configurable rectifier module

This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as d...

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Bibliographic Details
Main Authors:	Mouawad, Bassem, Wang, Zhenyu, Buettner, J., Castellazzi, Alberto
Format:	Conference or Workshop Item
Published:	2017
Subjects:	Wide bandgap devices Silicon Carbide (SiC) Packaging Diode High voltage power converters Wind energy
Online Access:	https://eprints.nottingham.ac.uk/44033/

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