3.3 kV SiC JBS diode configurable rectifier module
This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as d...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/44033/ |