3.3 kV SiC JBS diode configurable rectifier module
This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as d...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Online Access: | https://eprints.nottingham.ac.uk/44033/ |
| _version_ | 1848796821876375552 |
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| author | Mouawad, Bassem Wang, Zhenyu Buettner, J. Castellazzi, Alberto |
| author_facet | Mouawad, Bassem Wang, Zhenyu Buettner, J. Castellazzi, Alberto |
| author_sort | Mouawad, Bassem |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on Insulated Metal Substrates (IMS), as opposed to conventional ceramic type substrates. The layout and module pin terminations are chosen to yield optimum electro-thermal and electro-magnetic performance in compatibility with a standard solder and wire-bond assembly process. Preliminary functional static characterization tests at different temper¬atures are also presented. |
| first_indexed | 2025-11-14T19:54:05Z |
| format | Conference or Workshop Item |
| id | nottingham-44033 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:54:05Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-440332020-05-04T18:32:41Z https://eprints.nottingham.ac.uk/44033/ 3.3 kV SiC JBS diode configurable rectifier module Mouawad, Bassem Wang, Zhenyu Buettner, J. Castellazzi, Alberto This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on Insulated Metal Substrates (IMS), as opposed to conventional ceramic type substrates. The layout and module pin terminations are chosen to yield optimum electro-thermal and electro-magnetic performance in compatibility with a standard solder and wire-bond assembly process. Preliminary functional static characterization tests at different temper¬atures are also presented. 2017-03-01 Conference or Workshop Item PeerReviewed Mouawad, Bassem, Wang, Zhenyu, Buettner, J. and Castellazzi, Alberto (2017) 3.3 kV SiC JBS diode configurable rectifier module. In: EPE-ECCE 2017, 11-14 Sept 2017, Warsaw, Poland. (In Press) Wide bandgap devices Silicon Carbide (SiC) Packaging Diode High voltage power converters Wind energy |
| spellingShingle | Wide bandgap devices Silicon Carbide (SiC) Packaging Diode High voltage power converters Wind energy Mouawad, Bassem Wang, Zhenyu Buettner, J. Castellazzi, Alberto 3.3 kV SiC JBS diode configurable rectifier module |
| title | 3.3 kV SiC JBS diode configurable rectifier module |
| title_full | 3.3 kV SiC JBS diode configurable rectifier module |
| title_fullStr | 3.3 kV SiC JBS diode configurable rectifier module |
| title_full_unstemmed | 3.3 kV SiC JBS diode configurable rectifier module |
| title_short | 3.3 kV SiC JBS diode configurable rectifier module |
| title_sort | 3.3 kv sic jbs diode configurable rectifier module |
| topic | Wide bandgap devices Silicon Carbide (SiC) Packaging Diode High voltage power converters Wind energy |
| url | https://eprints.nottingham.ac.uk/44033/ |