High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs

QR Code

High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs

The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The driver is implemented by means of two small magnetic transformers, to provide the turn-on and turn-off gate signals, as well as the power required for an adequate gate control. The operation is based on th...

Full description

Bibliographic Details
Main Authors:	Garcia, Jorge, Gurpinar, Emre, Castellazzi, Alberto
Format:	Conference or Workshop Item
Published:	2017
Subjects:	gate driver SiC MOSFET Wide Band Gap devices
Online Access:	https://eprints.nottingham.ac.uk/43843/

Similar Items

Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2016)

High temperature pulsed-gate robustness testing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2015)

Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly
by: Lasserre, Philippe, et al.
Published: (2016)

Modular integrated SiC MOSFET matrix converter
by: Aliyu, Attahir Murtala, et al.
Published: (2017)

Built-in reliability design of a high-frequency SiC MOSFET power module
by: Li, Jianfeng, et al.
Published: (2014)

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2014)

Transient out-of-SOA robustness of SiC power MOSFETs
by: Castellazzi, Alberto, et al.
Published: (2017)

SiC power MOSFETs performance, robustness and technology maturity
by: Castellazzi, Alberto, et al.
Published: (2016)

Full SiC Version of the EDA5 Inverter
by: Chowdhury, Shajjad, et al.
Published: (2017)

A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2017)

Experimental and analytical performance evaluation of SiC power devices in the matrix converter
by: Safari, Saeed, et al.
Published: (2014)

Testing of a lightweight SiC power module for avionic applications
by: Gurpinar, Emre, et al.
Published: (2014)

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling
by: Hussein, Abdallah, et al.
Published: (2018)

Optimization of thermal management and power density of small-scale wind turbine applications using SiC-MOSFETs
by: Hussein, Abdallah, et al.
Published: (2017)

Body diode reliability investigation of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2016)

Wide-bandgap semiconductor based power converters for renewable energy systems
by: Gurpinar, Emre
Published: (2017)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors
by: Yang, Li, et al.
Published: (2018)

Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2016)

Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design
by: Giuliani, F., et al.
Published: (2014)

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2015)

A physical RC network model for electro-thermal analysis of a multichip SiC power module
by: Li, Jianfeng, et al.
Published: (2017)

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
by: Romano, Gianpaolo, et al.
Published: (2016)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs
by: Romano, Gianpaolo, et al.
Published: (2016)

GaN HEMT gate-driver for achieving high power converter integration levels
by: Wu, H, et al.
Published: (2018)

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2017)

Performance and robustness characterisation of SiC power MOSFETs
by: Fayyaz, Asad
Published: (2018)

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules
by: Ortiz Gonzalez, J., et al.
Published: (2016)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool
by: Li, Ke, et al.
Published: (2017)

Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile
by: O'Donnell, Shane, et al.
Published: (2016)

A physics-based compact model of SiC power MOSFETs
by: Kraus, Rainer, et al.
Published: (2016)

Design and development of a high-density, high-speed 10 kV SiC MOSFET module
by: Di Marino, Christina, et al.
Published: (2017)

UIS failure mechanism of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2016)

3.3 kV SiC JBS diode configurable rectifier module
by: Mouawad, Bassem, et al.
Published: (2017)

Design optimization of quasi-active gate control for series-connected power devices
by: Teerakawanich, Nithiphat, et al.
Published: (2014)

Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs
by: Trentin, Andrew, et al.
Published: (2015)

Suppression of electromagnetic interference using screening and shielding techniques within switching cells
by: Zhang, Zhe, et al.
Published: (2017)

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
by: Rebaoui, Z., et al.
Published: (2017)