High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The driver is implemented by means of two small magnetic transformers, to provide the turn-on and turn-off gate signals, as well as the power required for an adequate gate control. The operation is based on th...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/43843/ |