Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN

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Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured using the AlGaN material system; however, their ef...

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Bibliographic Details
Main Authors:	Novikov, Sergei V., Kent, A.J., Foxon, C.T.
Format:	Article
Published:	Elsevier 2017
Online Access:	https://eprints.nottingham.ac.uk/42718/

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