A physical RC network model for electro-thermal analysis of a multichip SiC power module

QR Code

A physical RC network model for electro-thermal analysis of a multichip SiC power module

This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrate...

Full description

Bibliographic Details
Main Authors:	Li, Jianfeng, Castellazzi, Alberto, Eleffendi, Mohd Amir, Gurpinar, Emre, Johnson, Christopher Mark, Mills, Liam
Format:	Article
Published:	IEEE 2017
Subjects:	MOSFETs SiC power module Finite element methods RC network Curve fitting Three-phase inverters
Online Access:	https://eprints.nottingham.ac.uk/42231/

Similar Items

Testing of a lightweight SiC power module for avionic applications
by: Gurpinar, Emre, et al.
Published: (2014)

Built-in reliability design of a high-frequency SiC MOSFET power module
by: Li, Jianfeng, et al.
Published: (2014)

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling
by: Hussein, Abdallah, et al.
Published: (2018)

Full SiC Version of the EDA5 Inverter
by: Chowdhury, Shajjad, et al.
Published: (2017)

High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2017)

Experimental and analytical performance evaluation of SiC power devices in the matrix converter
by: Safari, Saeed, et al.
Published: (2014)

Multidomain modelling of multichip SiC power modules
by: Olanrewaju, Olufisayo Abimbola
Published: (2020)

SiC power MOSFETs performance, robustness and technology maturity
by: Castellazzi, Alberto, et al.
Published: (2016)

High temperature pulsed-gate robustness testing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2015)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Wide-bandgap semiconductor based power converters for renewable energy systems
by: Gurpinar, Emre
Published: (2017)

Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors
by: Yang, Li, et al.
Published: (2018)

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2014)

Modular integrated SiC MOSFET matrix converter
by: Aliyu, Attahir Murtala, et al.
Published: (2017)

Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly
by: Lasserre, Philippe, et al.
Published: (2016)

Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2016)

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2015)

Optimization of thermal management and power density of small-scale wind turbine applications using SiC-MOSFETs
by: Hussein, Abdallah, et al.
Published: (2017)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules
by: Ortiz Gonzalez, J., et al.
Published: (2016)

SiC-based power electronics for wind energy applications
by: Hussein, Abdallah Suliman
Published: (2019)

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool
by: Li, Ke, et al.
Published: (2017)

Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design
by: Giuliani, F., et al.
Published: (2014)

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
by: Romano, Gianpaolo, et al.
Published: (2016)

Novel multilevel hybrid inverter topology with power scalability
by: Gurpinar, Emre, et al.
Published: (2016)

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
by: Rebaoui, Z., et al.
Published: (2017)

Design and development of a high-density, high-speed 10 kV SiC MOSFET module
by: Di Marino, Christina, et al.
Published: (2017)

Hybrid half-bridge package for high voltage application
by: Mouawad, Bassem, et al.
Published: (2015)

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs
by: Romano, Gianpaolo, et al.
Published: (2016)

Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile
by: O'Donnell, Shane, et al.
Published: (2016)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

Low parasitic inductance multi-chip SiC devices packaging technology
by: Li, Jianfeng, et al.
Published: (2016)

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles
by: Li, Jianfeng, et al.
Published: (2015)

Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter
by: Zeng, Y., et al.
Published: (2018)

3.3 kV SiC JBS diode configurable rectifier module
by: Mouawad, Bassem, et al.
Published: (2017)

A novel five-level optimized carrier multilevel PWM quad-inverter six-phase AC drive
by: Sanjeevikumar, Padmanaban, et al.
Published: (2016)

A novel multilevel quad-inverter configuration for quasi six-phase open-winding converter
by: Padmanaban, Sanjeevikumar, et al.
Published: (2016)

Proposed novel multiphase-multilevel inverter configuration for open-end winding loads
by: Padmanaban, Sanjeevikumar, et al.
Published: (2016)

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures
by: Castellazzi, Alberto, et al.
Published: (2018)

Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
by: Pang, W., et al.
Published: (2010)