High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

QR Code

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor h...

Full description

Bibliographic Details
Main Authors:	Cheng, Tin S., Davies, Andrew, Summerfield, Alex, Cho, YongJin, Cebula, Izabela, Hill, Richard J.A., Mellor, Christopher J., Khlobystov, Andrei N., Taniguchi, Takashi, Watanabe, Kenji, Beton, Peter H., Foxon, C. Thomas, Eaves, Laurence, Novikov, Sergei V.
Format:	Article
Published:	AIP 2016
Online Access:	https://eprints.nottingham.ac.uk/42169/

Similar Items

Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy
by: Summerfield, Alex, et al.
Published: (2016)

Moiré-modulated conductance of hexagonal boron nitride tunnel barriers
by: Summerfield, Alex, et al.
Published: (2018)

High-temperature molecular beam epitaxy of hexagonal boron nitride layers
by: Cheng, Tin S., et al.
Published: (2018)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes
by: Cheng, Tin S., et al.
Published: (2018)

Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy
by: Cho, Yong-Jin, et al.
Published: (2016)

Production, characterization and application of silicon-on-sapphire wafers
by: Pramanik, Alokesh, et al.
Published: (2010)

The identification of the components for Ti:sapphire laser oscillator
by: Wan Razali, Wan Aizuddin, et al.
Published: (2007)

An atomic carbon source for high temperature molecular beam epitaxy of graphene
by: Albar, J.D., et al.
Published: (2017)

Development of continuous wave and mode locked titanium sapphire laser
by: Wan Razali, Wan Aizuddin
Published: (2008)

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
by: Novikov, Sergei V., et al.
Published: (2017)

Residual stresses in multi-layered silicon-on-sapphire thin film systems
by: Pramanik, Alokesh, et al.
Published: (2011)

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
by: Vuong, T.Q.P., et al.
Published: (2017)

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
by: Beardsley, R.P., et al.
Published: (2016)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

Titanium doped sapphire crystal excited by diode pumped solid state laser
by: Saidin, Mohamad Khairi, et al.
Published: (2008)

Study the absorption of diode pumped solid state laser on Ti: sapphire crystal
by: Bidin, Noriah, et al.
Published: (2007)

Redox enterprise: to ensure total satisfaction for our user / Sapphire Moujing... [et.al]
by: Moujing, Sapphire, et al.
Published: (2017)

Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

A finite element analysis of residual stress in brazing of sapphire and inconel / Chan Chow Khuen
by: Chan, Chow Khuen
Published: (2011)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Characteristic Enrichment of the Blue LED by MOCVD on Patterned Sapphire (0 0 0 1) Substrate
by: Kamarulzaman, Kamarul Alif, et al.
Published: (2016)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Nucleation and early stages of layer-by-layer growth of metal organic frameworks on surfaces
by: Summerfield, Alex, et al.
Published: (2015)

Studies of self-assembled metal-organic nanostructures and the MBE growth of graphene
by: Summerfield, Alex
Published: (2016)

Nanoscale elastic-plastic deformation and stress distributions on the C plane of sapphire single crystal during nanoindentation
by: Mao, W., et al.
Published: (2011)

The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
by: C, W Chin, et al.
Published: (2007)

The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD)
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2019)

An Investigation Of GaN Thin Films On Ain Sapphire Substrate By Sol-Gel Spin Coating Method
by: Amin, NurFahana Mohd, et al.
Published: (2016)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source
by: Novikov, Sergei V., et al.
Published: (2016)

Lattice-matched epitaxial graphene grown on boron nitride
by: Davies, Andrew, et al.
Published: (2018)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
by: Jiang, Jie’an, et al.
Published: (2019)

Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator
by: Ariff, A., et al.
Published: (2015)

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar
by: Mohd Afiq , Anuar
Published: (2020)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire
by: Song, T. L.
Published: (2005)

High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman
by: Mohd Nazri , Abd Rahman
Published: (2021)