High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor h...

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Bibliographic Details
Main Authors: Cheng, Tin S., Davies, Andrew, Summerfield, Alex, Cho, YongJin, Cebula, Izabela, Hill, Richard J.A., Mellor, Christopher J., Khlobystov, Andrei N., Taniguchi, Takashi, Watanabe, Kenji, Beton, Peter H., Foxon, C. Thomas, Eaves, Laurence, Novikov, Sergei V.
Format: Article
Published: AIP 2016
Online Access:https://eprints.nottingham.ac.uk/42169/

Internet

https://eprints.nottingham.ac.uk/42169/

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