High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor h...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
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AIP
2016
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| Online Access: | https://eprints.nottingham.ac.uk/42169/ |
| _version_ | 1848796436944125952 |
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| author | Cheng, Tin S. Davies, Andrew Summerfield, Alex Cho, YongJin Cebula, Izabela Hill, Richard J.A. Mellor, Christopher J. Khlobystov, Andrei N. Taniguchi, Takashi Watanabe, Kenji Beton, Peter H. Foxon, C. Thomas Eaves, Laurence Novikov, Sergei V. |
| author_facet | Cheng, Tin S. Davies, Andrew Summerfield, Alex Cho, YongJin Cebula, Izabela Hill, Richard J.A. Mellor, Christopher J. Khlobystov, Andrei N. Taniguchi, Takashi Watanabe, Kenji Beton, Peter H. Foxon, C. Thomas Eaves, Laurence Novikov, Sergei V. |
| author_sort | Cheng, Tin S. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor has been specially modified by Veeco to achieve growth temperatures of up to 1850 _C in ultrahigh vacuum conditions and is capable of growth on substrates of up to 3 in. in diameter. To calibrate the growth temperatures, the authors have formed graphene on the Si-face of SiC by heating wafers to temperatures up to 1400 _C and above. To demonstrate the scalability, the authors have formed graphene on SiC substrates with sizes ranging from 10 _ 10mm2 up to 3-in. in diameter. The authors have used a carbon sublimation source to grow graphene on sapphire at substrate temperatures between 1000 and 1650 _C (thermocouple temperatures). The quality of the graphene layers is significantly improved by growing on hexagonal boron nitride (h-BN) substrates. The authors observed a significant difference in the sticking coefficient of carbon on the surfaces of sapphire and h-BN flakes. Our atomic force microscopy measurements reveal the formation of an extended hexagonal moir_e pattern when our MBE layers of graphene on h-BN flakes are grown under optimum conditions. The authors attribute this moir_e pattern to the commensurate growth of crystalline graphene on h-BN. |
| first_indexed | 2025-11-14T19:47:58Z |
| format | Article |
| id | nottingham-42169 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:47:58Z |
| publishDate | 2016 |
| publisher | AIP |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-421692020-05-04T17:32:38Z https://eprints.nottingham.ac.uk/42169/ High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire Cheng, Tin S. Davies, Andrew Summerfield, Alex Cho, YongJin Cebula, Izabela Hill, Richard J.A. Mellor, Christopher J. Khlobystov, Andrei N. Taniguchi, Takashi Watanabe, Kenji Beton, Peter H. Foxon, C. Thomas Eaves, Laurence Novikov, Sergei V. The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor has been specially modified by Veeco to achieve growth temperatures of up to 1850 _C in ultrahigh vacuum conditions and is capable of growth on substrates of up to 3 in. in diameter. To calibrate the growth temperatures, the authors have formed graphene on the Si-face of SiC by heating wafers to temperatures up to 1400 _C and above. To demonstrate the scalability, the authors have formed graphene on SiC substrates with sizes ranging from 10 _ 10mm2 up to 3-in. in diameter. The authors have used a carbon sublimation source to grow graphene on sapphire at substrate temperatures between 1000 and 1650 _C (thermocouple temperatures). The quality of the graphene layers is significantly improved by growing on hexagonal boron nitride (h-BN) substrates. The authors observed a significant difference in the sticking coefficient of carbon on the surfaces of sapphire and h-BN flakes. Our atomic force microscopy measurements reveal the formation of an extended hexagonal moir_e pattern when our MBE layers of graphene on h-BN flakes are grown under optimum conditions. The authors attribute this moir_e pattern to the commensurate growth of crystalline graphene on h-BN. AIP 2016-01-11 Article PeerReviewed Cheng, Tin S., Davies, Andrew, Summerfield, Alex, Cho, YongJin, Cebula, Izabela, Hill, Richard J.A., Mellor, Christopher J., Khlobystov, Andrei N., Taniguchi, Takashi, Watanabe, Kenji, Beton, Peter H., Foxon, C. Thomas, Eaves, Laurence and Novikov, Sergei V. (2016) High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science & Technology B, 34 (2). 02L101. ISSN 1071-1023 http://avs.scitation.org/doi/10.1116/1.4938157 doi:10.1116/1.4938157 doi:10.1116/1.4938157 |
| spellingShingle | Cheng, Tin S. Davies, Andrew Summerfield, Alex Cho, YongJin Cebula, Izabela Hill, Richard J.A. Mellor, Christopher J. Khlobystov, Andrei N. Taniguchi, Takashi Watanabe, Kenji Beton, Peter H. Foxon, C. Thomas Eaves, Laurence Novikov, Sergei V. High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title | High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title_full | High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title_fullStr | High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title_full_unstemmed | High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title_short | High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| title_sort | high temperature mbe of graphene on sapphire and hexagonal boron nitride flakes on sapphire |
| url | https://eprints.nottingham.ac.uk/42169/ https://eprints.nottingham.ac.uk/42169/ https://eprints.nottingham.ac.uk/42169/ |