Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors
We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study...
| Main Authors: | , , , |
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| Format: | Article |
| Published: |
IOP Publishing
2015
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| Online Access: | https://eprints.nottingham.ac.uk/42083/ |