Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and p...

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Main Authors: Wang, M., Wadley, P., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Charlton, T.R., Kinane, C.J., Langridge, S.
Format: Article
Published: American Institute of Physics 2015
Online Access:https://eprints.nottingham.ac.uk/42039/
_version_ 1848796403977945088
author Wang, M.
Wadley, P.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Gallagher, B.L.
Charlton, T.R.
Kinane, C.J.
Langridge, S.
author_facet Wang, M.
Wadley, P.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Gallagher, B.L.
Charlton, T.R.
Kinane, C.J.
Langridge, S.
author_sort Wang, M.
building Nottingham Research Data Repository
collection Online Access
description We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.
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format Article
id nottingham-42039
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T19:47:26Z
publishDate 2015
publisher American Institute of Physics
recordtype eprints
repository_type Digital Repository
spelling nottingham-420392020-05-04T17:15:39Z https://eprints.nottingham.ac.uk/42039/ Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers Wang, M. Wadley, P. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Gallagher, B.L. Charlton, T.R. Kinane, C.J. Langridge, S. We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields. American Institute of Physics 2015-08-06 Article PeerReviewed Wang, M., Wadley, P., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Charlton, T.R., Kinane, C.J. and Langridge, S. (2015) Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118 (5). 053913/1-053913/5. ISSN 0021-8979 http://aip.scitation.org/doi/10.1063/1.4928206 doi:10.1063/1.4928206 doi:10.1063/1.4928206
spellingShingle Wang, M.
Wadley, P.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Gallagher, B.L.
Charlton, T.R.
Kinane, C.J.
Langridge, S.
Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title_full Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title_fullStr Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title_full_unstemmed Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title_short Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
title_sort magnetic coupling in ferromagnetic semiconductor (ga,mn)as/(al,ga,mn)as bilayers
url https://eprints.nottingham.ac.uk/42039/
https://eprints.nottingham.ac.uk/42039/
https://eprints.nottingham.ac.uk/42039/