Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers
We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and p...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
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American Institute of Physics
2015
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| Online Access: | https://eprints.nottingham.ac.uk/42039/ |
| _version_ | 1848796403977945088 |
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| author | Wang, M. Wadley, P. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Gallagher, B.L. Charlton, T.R. Kinane, C.J. Langridge, S. |
| author_facet | Wang, M. Wadley, P. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Gallagher, B.L. Charlton, T.R. Kinane, C.J. Langridge, S. |
| author_sort | Wang, M. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields. |
| first_indexed | 2025-11-14T19:47:26Z |
| format | Article |
| id | nottingham-42039 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:47:26Z |
| publishDate | 2015 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-420392020-05-04T17:15:39Z https://eprints.nottingham.ac.uk/42039/ Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers Wang, M. Wadley, P. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Gallagher, B.L. Charlton, T.R. Kinane, C.J. Langridge, S. We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields. American Institute of Physics 2015-08-06 Article PeerReviewed Wang, M., Wadley, P., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Charlton, T.R., Kinane, C.J. and Langridge, S. (2015) Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118 (5). 053913/1-053913/5. ISSN 0021-8979 http://aip.scitation.org/doi/10.1063/1.4928206 doi:10.1063/1.4928206 doi:10.1063/1.4928206 |
| spellingShingle | Wang, M. Wadley, P. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Gallagher, B.L. Charlton, T.R. Kinane, C.J. Langridge, S. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title | Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title_full | Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title_fullStr | Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title_full_unstemmed | Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title_short | Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers |
| title_sort | magnetic coupling in ferromagnetic semiconductor (ga,mn)as/(al,ga,mn)as bilayers |
| url | https://eprints.nottingham.ac.uk/42039/ https://eprints.nottingham.ac.uk/42039/ https://eprints.nottingham.ac.uk/42039/ |