Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and p...

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Bibliographic Details
Main Authors: Wang, M., Wadley, P., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Charlton, T.R., Kinane, C.J., Langridge, S.
Format: Article
Published: American Institute of Physics 2015
Online Access:https://eprints.nottingham.ac.uk/42039/