UIS failure mechanism of SiC power MOSFETs

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UIS failure mechanism of SiC power MOSFETs

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an importan...

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Bibliographic Details
Main Authors:	Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J., Wright, Nick
Format:	Conference or Workshop Item
Published:	2016
Subjects:	Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching
Online Access:	https://eprints.nottingham.ac.uk/41655/

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