UIS failure mechanism of SiC power MOSFETs
This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an importan...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/41655/ |