UIS failure mechanism of SiC power MOSFETs
This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an importan...
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| Format: | Conference or Workshop Item |
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2016
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| Online Access: | https://eprints.nottingham.ac.uk/41655/ |
| _version_ | 1848796324905877504 |
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| author | Fayyaz, Asad Castellazzi, Alberto Romano, Gianpaolo Riccio, Michele Urresti, J. Wright, Nick |
| author_facet | Fayyaz, Asad Castellazzi, Alberto Romano, Gianpaolo Riccio, Michele Urresti, J. Wright, Nick |
| author_sort | Fayyaz, Asad |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study. |
| first_indexed | 2025-11-14T19:46:11Z |
| format | Conference or Workshop Item |
| id | nottingham-41655 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:46:11Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-416552020-05-04T18:24:06Z https://eprints.nottingham.ac.uk/41655/ UIS failure mechanism of SiC power MOSFETs Fayyaz, Asad Castellazzi, Alberto Romano, Gianpaolo Riccio, Michele Urresti, J. Wright, Nick This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study. 2016-12-29 Conference or Workshop Item PeerReviewed Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching http://ieeexplore.ieee.org/abstract/document/7799921/ |
| spellingShingle | Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching Fayyaz, Asad Castellazzi, Alberto Romano, Gianpaolo Riccio, Michele Urresti, J. Wright, Nick UIS failure mechanism of SiC power MOSFETs |
| title | UIS failure mechanism of SiC power MOSFETs |
| title_full | UIS failure mechanism of SiC power MOSFETs |
| title_fullStr | UIS failure mechanism of SiC power MOSFETs |
| title_full_unstemmed | UIS failure mechanism of SiC power MOSFETs |
| title_short | UIS failure mechanism of SiC power MOSFETs |
| title_sort | uis failure mechanism of sic power mosfets |
| topic | Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching |
| url | https://eprints.nottingham.ac.uk/41655/ https://eprints.nottingham.ac.uk/41655/ |