Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnet...
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| Format: | Article |
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Springer
2017
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| Online Access: | https://eprints.nottingham.ac.uk/41566/ |
| _version_ | 1848796304542531584 |
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| author | Gordo, V. Orsi Gobato, Y.G. Galeti, H.V.A. Brasil, M.J.S.P. Taylor, David Henini, M. |
| author_facet | Gordo, V. Orsi Gobato, Y.G. Galeti, H.V.A. Brasil, M.J.S.P. Taylor, David Henini, M. |
| author_sort | Gordo, V. Orsi |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs. |
| first_indexed | 2025-11-14T19:45:51Z |
| format | Article |
| id | nottingham-41566 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:45:51Z |
| publishDate | 2017 |
| publisher | Springer |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-415662020-05-04T18:36:29Z https://eprints.nottingham.ac.uk/41566/ Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices Gordo, V. Orsi Gobato, Y.G. Galeti, H.V.A. Brasil, M.J.S.P. Taylor, David Henini, M. In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs. Springer 2017-03-02 Article PeerReviewed Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David and Henini, M. (2017) Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46 (7). pp. 3851-3856. ISSN 1543-186X Quantum rings photoluminescence spin polarization resonant tunneling https://link.springer.com/article/10.1007%2Fs11664-017-5391-2 doi:10.1007/s11664-017-5391-2 doi:10.1007/s11664-017-5391-2 |
| spellingShingle | Quantum rings photoluminescence spin polarization resonant tunneling Gordo, V. Orsi Gobato, Y.G. Galeti, H.V.A. Brasil, M.J.S.P. Taylor, David Henini, M. Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title | Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title_full | Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title_fullStr | Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title_full_unstemmed | Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title_short | Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices |
| title_sort | spin polarization of carriers in ingaas self-assembled quantum rings inserted in gaas-algaas resonant tunneling devices |
| topic | Quantum rings photoluminescence spin polarization resonant tunneling |
| url | https://eprints.nottingham.ac.uk/41566/ https://eprints.nottingham.ac.uk/41566/ https://eprints.nottingham.ac.uk/41566/ |